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二極體 Diodes
TVS
電晶管 TR
場效電晶體 MOS
LDO
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Semiconductors
DIODES
Protection Devices (2325)
RF Diodes (2)
Diodes (337)
Rectifiers (979)
BIPOLAR TRANSISTOR
Transistor (223)
Digital Transistor (346)
RF Transistor (3)
MOSFET
MOSFET (294)
AECQ-100
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IC
Power Management ICs
Low Dropout Regulators (16)
TVS Diodes
‒
TYPE
‒
Data Sheet
‒
Power Dissipation @ 25°C (max) P
D
(W)
‒
Breakdown Voltage(typ)V
BR
(V)
‒
@I
T
(mA)
‒
Working Peak Reverse Voltage Vrwm(V)
‒
Maximum Reverse Leakage at Vrwm I
R
(uA)
‒
Maximum Reverse Current Ipp(A)
‒
Maximum Reverse Voltage at Ipp(clamping) V
C(V)
‒
Package
TVSF15AGP-A
200
16.7(min)
1
15
5
8.2
24.4
SOD-123F
TVSF17AGP-A
200
18.9(min)
1
17
5
7.25
27.6
SOD-123F
TVSF28AGP-A
200
31.1(min)
1
28
5
4.41
45.4
SOD-123F
TVSF30AGP-A
200
33.3(min)
1
30
5
4.12
48.4
SOD-123F
TVSF33AGP-A
200
36.7(min)
1
33
5
3.75
53.3
SOD-123F
TVSF36AGP-A
200
40(min)
1
36
5
3.44
58.1
SOD-123F
TVSF45AGP-A
200
50(min)
1
45
5
2.75
72.7
SOD-123F
TVSF5.0AGP-A
200
6.4(min)
10
5
800
21.7
9.2
SOD-123F
TVSF6.0AGP-A
200
6.67(min)
10
6
800
10.3
19.4
SOD-123F
TVSF6.5AGP-A
200
7.22(min)
10
6.5
500
11.2
17.9
SOD-123F
TVSF7.5AGP-A
200
8.33(min)
1
7.5
100
15.5
12.9
SOD-123F
TVSF8.5AGP-A
200
9.44(min)
1
8.5
10
13.9
14.4
SOD-123F
TVSF9.0AGP-A
200
10(min)
1
9
5
13
15.4
SOD-123F
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